Силовой IGBT-модуль 1200 В (корпус 62 мм)Главное изображение продукта

IGBT-1200V-62MM

Power IGBT Module 1200 V (Package 62 mm)

Half-bridge IGBT module for medium and high-power drives and inverters. Gate driver and cooling solution included with the module.

  • Module 62 mm
  • Inverters / Variable Frequency Drives (VFDs) / Motor Drives
  • Power Semiconductors
Силовой IGBT-модуль 1200 В (корпус 62 мм)Фотография продукта
Description

Product Description

Серия выполнена в стандартном полумостовом корпусе 62 мм и применяется в промышленных преобразователях частоты, солнечных инверторах и приводах средней и большой мощности. Драйвер затвора и рекомендации по радиатору входят в одно предложение, поэтому каскад управления закупается в одном месте.

Specifications

Technical Specifications

Voltage range
1200 V
Collector-Emitter Voltage1200 V
ChassisСтандартный модуль 62 мм
ТопологияПолумост / шесть элементов на выбор
Диапазон температуры перехода-40 ℃ ~ +150 ℃
Common use casesПреобразователь частоты, инвертор, привод двигателя

Parameters show the typical range for the category; specifications confirmed at order take precedence.

Supply

Delivery Terms

  • Warehouse and order channels in parallel
  • Batch and channel information by request
  • Samples and small batches are available
Alternatives

Replaceable models

The listed part numbers may serve as equivalents: similar specifications or compatible pinouts. Please verify against the datasheet.

Some entries are series links. Before bulk purchasing, verify the housing, ratings, and melting characteristics.

Brand

FF300R12ME4

InfineonOther chassis
Chassis
—
Nominal parameters
—/ —

Полумостовой модуль, 1200 В/300 А, корпус 62 мм, совместимые выводы

2MBI300VH-120

Fuji ElectricOther chassis
Chassis
—
Nominal parameters
—/ —

Полумостовой модуль, 1200 В/300 А, близкие параметры, возможна замена

CM300DY-24A

Mitsubishi ElectricOther chassis
Chassis
—
Nominal parameters
—/ —

Полумостовой IGBT-модуль, 1200 В/300 А, стандартный корпус 62 мм

SKM300GB12T4

SEMIKRONOther chassis
Chassis
—
Nominal parameters
—/ —

Полумостовой IGBT-модуль, 1200 В/300 А, технология Trench с малыми потерями

F3L300R12W2H3

InfineonOther chassis
Chassis
—
Nominal parameters
—/ —

Трёхуровневый IGBT-модуль, 1200 В/300 А, для солнечных инверторов

Replacement models are for reference only. Final selection should be based on application requirements and specifications. For additional recommendations, please submit a request.

Get Price and Delivery Time

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By submitting the form, you agree to be contacted at the provided details to discuss quotes.

Contact directly

Mon-Fri 09:00-18:30, Sat 09:30-17:00

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Chasing Dreams in SemiconductorsZhumeng Semiconductor

Shenzhen Zhumeng Semiconductor Co., Ltd. is headquartered in Shenzhen and has long specialized in electronic component distribution, supplying components, selection guidance, and BOM procurement services to clients across consumer electronics, industrial automation, energy storage, new energy, and medical equipment sectors. Our service excellence is built on supply chain traceability, fast quoting, and clear batch communication—helping customers reduce the cost of managing multiple suppliers.

Contact Information

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  • szjoeychen
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