1200-V-IGBT-Leistungsmodul (62-mm-Gehäuse)Produkthauptbild

IGBT-1200V-62MM

1200-V-IGBT-Leistungsmodul (62-mm housing)

Half-bridge IGBT module for medium and high-power motor drives and inverters. Gate drivers and cooling concepts are available upon request.

  • 62-mm-Modul
  • Variable Frequency Drive / Inverter / Motor Drive
  • Power semiconductor
1200-V-IGBT-Leistungsmodul (62-mm-Gehäuse)Produktfoto
Description

Product Description

Die Serie nutzt den standardisierten 62-mm-Halbbrückenaufbau und wird in Industrieumrichtern, PV-Wechselrichtern und Antrieben mittlerer bis hoher Leistung eingesetzt. Passende Gatetreiberbausteine und Vorschläge zur Kühlkörperauswahl erhalten Sie im selben Angebot, sodass die Ansteuerstufe aus einer Hand kommt.

Specifications

Specifications

Voltage range
1200 V
Collector-Emitter Voltage1200 V
Enclosure62-mm-Standardmodul
TopologieHalbbrücke / Sechsfach wählbar
Sperrschichttemperaturbereich-40 ℃ ~ +150 ℃
Typical ApplicationsUmrichter, Wechselrichter, Motorantrieb

The parameters indicate the typical range for this category; the data sheet confirmed with your order is authoritative.

Supply

Delivery Information

  • Warehouse and order channels in parallel
  • Lot and supply chain details available
  • Samples and small-batch production available
Alternatives

Replacement Types

The following types can serve as alternatives with similar values or pin compatibility; please verify in the datasheet.

Some entries are serial references. Before purchasing in series, verify the housing, rated values, and melting behavior.

Brand

FF300R12ME4

InfineonOther enclosure
Enclosure
—
Nominal Value
—/ —

Halbbrückenmodul, 1200 V/300 A, 62-mm-Gehäuse mit kompatibler Pinbelegung

2MBI300VH-120

Fuji ElectricOther enclosure
Enclosure
—
Nominal Value
—/ —

Halbbrückenmodul, 1200 V/300 A, ähnliche Werte als Alternative

CM300DY-24A

Mitsubishi ElectricOther enclosure
Enclosure
—
Nominal Value
—/ —

Halbbrücken-IGBT-Modul, 1200 V/300 A, 62-mm-Standardgehäuse

SKM300GB12T4

SEMIKRONOther enclosure
Enclosure
—
Nominal Value
—/ —

Halbbrücken-IGBT-Modul, 1200 V/300 A, Trench-Technik mit geringen Verlusten

F3L300R12W2H3

InfineonOther enclosure
Enclosure
—
Nominal Value
—/ —

Dreistufen-IGBT-Modul, 1200 V/300 A, für PV-Wechselrichter

Replacement types are for reference only. Please confirm your final selection based on application requirements and the datasheet. For further consultation, please submit an inquiry.

Offer and Delivery Time

Enter the type and quantity; we'll respond within one business day with a quote, lead time, and channel guidance.

By submitting, you agree to let us contact you at the above-mentioned contact details regarding this offer.

Contact Us

Monday to Friday 09:00-18:30, Saturday 09:30-17:00

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Chasing Dreams in SemiconductorsZhumeng Semiconductor

Shenzhen Zhumeng Semiconductor Co., Ltd., headquartered in Shenzhen, has long specialized in distributing electronic components. We serve customers across consumer electronics, industrial automation, energy storage, renewable energy, and medical devices with components, selection consulting, and complete BOM sourcing. Our approach leverages transparent supply chains, rapid quote responses, and clear lot communication to reduce the cost of managing multiple vendors for our clients.

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