MOSFET-100V-TO247

100-V-N-Kanal-Leistungs-MOSFET

Low RDS(on) N-channel Power MOSFET for switching power supplies and battery systems.

TO-247
Switching Power Supplies / Power Tools / Energy Storage
Power semiconductor

Description

Product Description

Das TO-247-Gehäuse lässt sich gut kühlen und eignet sich für Synchrongleichrichtung in Schaltnetzteilen, Akkuwerkzeuge und bidirektionale Wandler in Speichern. Wir schlagen Alternativen mit passendem Strom und passender Schaltfrequenz vor.

Specifications

Voltage range: 100 V

Drain-Source Voltage	100 V
Enclosure	TO-247
Kanaltyp	N-Kanal
Operating Temperature Range	-55 ℃ ~ +175 ℃
Typical Applications	Schaltnetzteil, Speicher, Akkuwerkzeug

The parameters indicate the typical range for this category; the data sheet confirmed with your order is authoritative.

Supply

Delivery Information

Always-available inventory channel
Alternativtypen auf Anfrage
Gurt und Schüttgut lieferbar

Alternatives

Replacement Types

The following types can serve as alternatives with similar values or pin compatibility; please verify in the datasheet.

Some entries are serial references. Before purchasing in series, verify the housing, rated values, and melting behavior.

Sort

Brand

Alternative Type	Brand	Enclosure	Nominal Value	Note
IRFP460	Infineon	—	——	N-Kanal-MOSFET, 100 V/20 A, TO-247-Gehäuse kompatibel
IXFH36N100	IXYS	—	——	N-Kanal-MOSFET, 100 V/36 A, im TO-247-Gehäuse als Alternative
STW45NM100	STMicroelectronics	—	——	N-Kanal-MOSFET, 100 V/45 A, TO-247, niedrigeres Rds(on)
FQP12N100	onsemi	—	——	N-Kanal-MOSFET, 100 V/12 A, TO-247, funktional gleichwertig
IRF540N	Infineon	—	——	N-Kanal-MOSFET, 100 V/33 A, TO-220, universelle Alternative

IRFP460

InfineonOther enclosure

Enclosure: —
Nominal Value: —/ —

N-Kanal-MOSFET, 100 V/20 A, TO-247-Gehäuse kompatibel

IXFH36N100

IXYSOther enclosure

Enclosure: —
Nominal Value: —/ —

N-Kanal-MOSFET, 100 V/36 A, im TO-247-Gehäuse als Alternative

STW45NM100

STMicroelectronicsOther enclosure

Enclosure: —
Nominal Value: —/ —

N-Kanal-MOSFET, 100 V/45 A, TO-247, niedrigeres Rds(on)

FQP12N100

onsemiOther enclosure

Enclosure: —
Nominal Value: —/ —

N-Kanal-MOSFET, 100 V/12 A, TO-247, funktional gleichwertig

IRF540N

InfineonOther enclosure

Enclosure: —
Nominal Value: —/ —

N-Kanal-MOSFET, 100 V/33 A, TO-220, universelle Alternative

Replacement types are for reference only. Please confirm your final selection based on application requirements and the datasheet. For further consultation, please submit an inquiry.